parameter max. units i d @ tc = 25c continuous drain current, v gs @ 5.0 v 1.5 i d @ tc = 100c continuous drain current, v gs @ 5.0 v 0.93 i dm pulsed drain current 12 p d @tc = 25c power dissipation 3.1 p d @t a = 25c power dissipation (pcb mount)** 2..0 w linear derating factor 0.025 linear derating factor (pcb mount)** 0.017 w/c v gs gate-to-source voltage -/+10 v e as single pulse avalanche energy 50 mj i ar avalanche current 1.5 a e ar repetitive avalanche energy 0.31 mj dv/dt peak diode recovery dv/dt 5.5 v/ns t j, t stg junction and storage temperature range -55 to + 150 c IRLL110PBF hexfet ? power mosfet pd - 95222 s d g v dss = 100v r ds(on) = 0.54 ? i d = 1.5a third generation hexfets from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sot-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. its unique package design allows for easy automatic pick-and- place as with other sot or soic packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. power dissipation of grreater than 1.25w is possible in a typical surface mount application. 04/27/04 description surface mount available in tape & reel dynamic dv/dt rating repetitive avalanche rated logic-level gate drive rds(on)specified at vgs= 4v & 5v fast switching lead-free sot-223 ** when mounted on 1'' square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. parameter typ. max. units r jc junction-to-pcb ??? 40 r ja junction-to-ambient. (pcb mount)** ??? 60 thermal resistance c/w absolute maximum ratings a soldewring temperature, for 10 seconds 300 (1.6mm from case) www.vishay.com 1 document number: 91320
IRLL110PBF parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.54 v gs = 5.0v, i d = 0.90a ??? ??? 0.76 ? v gs = 4.0v, i d = 0.75a v gs(th) gate threshold voltage 1.0 ??? 2.0 v v ds = v gs , i d = 250a g fs forward transconductance 0.57 ??? ??? s v ds = 25v, i d = 0.90 a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 na v gs = 10v gate-to-source reverse leakage ??? ??? -100 v gs = -10v q g total gate charge ??? ??? 6.1 i d = 5.6a q gs gate-to-source charge ??? ??? 2.6 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? ??? 3.3 v gs = 5.0v, see fig. 6 and 13 t d(on) turn-on delay time ??? 9.3 ??? v dd = 50v t r rise time ??? 47 ??? ns i d = 5.6a t d(off) turn-off delay time ??? 16 ??? r g = 12 ? t f fall time ??? 18 ??? r d = 8.4 ?, nh c iss input capacitance ??? 250 ??? v gs = 0v c oss output capacitance ??? 80 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 15 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) i gss r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 5.6 a, di/dt 75a/s, v dd v (br)dss , t j 150c notes: v dd =25v, starting t j = 25c, l = 25 mh r g = 25 ? , i as = 1.5a. (see figure 12) pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 2.5 v t j = 25c, i s = 1.5a, v gs = 0v t rr reverse recovery time ??? 110 130 ns t j = 25c, i f = 5.6a q rr reverse recovery charge ??? 0.50 0.65 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ??? ??? ??? ??? 12 1.5 a s d g between lead, 6mm(0.25in) from package and center of die contact. l s internal source inductance internal drain inductance l d ??? 4.0 ??? ??? 6.0 ??? source-drain ratings and characteristics www.vishay.com 2 document number: 91320
IRLL110PBF www.vishay.com 3 document number: 91320
IRLL110PBF www.vishay.com 4 document number: 91320
IRLL110PBF www.vishay.com 5 document number: 91320
IRLL110PBF www.vishay.com 6 document number: 91320
IRLL110PBF sot-223 (to-261aa) package outline dimensions are shown in milimeters (inches) sot-223 (to-261aa) part marking information p = designates lead-free product (optional) a = assembly site code top bottom logo 314p axxxx part number int ernat ional rect ifier h e xf e t p r odu ct mar k ing f l 014 t his is an irfl014 lot code dat e code (yyww) yy = year ww = we e k www.vishay.com 7 document number: 91320
IRLL110PBF data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 04/04 sot-223 (to-261aa) tape & reel information dimensions are shown in milimeters (inches) 4.10 ( .161 ) 3.90 ( .154 ) 1.85 ( .072 ) 1.65 ( .065 ) 2.05 ( .080 ) 1.95 ( .077 ) 12.10 ( .475 ) 11.90 ( .469 ) 7.10 ( .279 ) 6.90 ( .272 ) 1.60 ( .0 6 2 ) 1.50 ( .0 5 9 ) typ . 7.55 ( .297 ) 7.45 ( .294 ) 7.60 ( .299 ) 7.40 ( .292 ) 2.30 ( .0 9 0 ) 2.10 ( .0 8 3 ) 16.30 ( .641 ) 15.70 ( .619 ) 0.35 ( .013 ) 0.25 ( .010 ) feed direction tr 13.20 ( .51 9 ) 12.80 ( .50 4 ) 50.00 ( 1.969 ) m in . 330.00 ( 13.000 ) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 ( 13.00 ) reel co ntains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 ( .607 ) 11.90 ( .469 ) 18.40 ( .724 ) m ax . 14.40 ( .566 ) 12.40 ( .488 ) 4 4 www.vishay.com 8 document number: 91320
legal disclaimer notice vishay document number: 99901 www.vishay.com revision: 12-mar-07 1 notice the products described herein were acquired by vishay intertechnology, inc., as part of its acquisition of international rectifier?s power control systems (pcs) business, which closed in april 2007. specifications of the products displayed herein are pending review by vishay and are subject to the terms and conditions shown below. specifications of the products displayed herein are subject to change without notice. vishay intertechnology, inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale. international rectifier ? , ir ? , the ir logo, hexfet ? , hexsense ? , hexdip ? , dol ? , intero ? , and powirtrain ? are registered trademarks of international rectifier corporation in the u.s. and other countries. all other product names noted herein may be trademarks of their respective owners.
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